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    Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - 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    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
    UG5J C0G

    UG5J C0G

    DIODE GEN PURP 600V 5A TO220AC

    Taiwan Semiconductor Corporation

    6,511
    RFQ
    UG5J C0G

    Datasheet

    - TO-220-2 Tube Discontinued Standard 600 V 5A 3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 30 µA @ 600 V - - - Through Hole TO-220AC -55°C ~ 150°C
    UG8JHC0G

    UG8JHC0G

    DIODE GEN PURP 600V 8A TO220AC

    Taiwan Semiconductor Corporation

    9,074
    RFQ
    UG8JHC0G

    Datasheet

    - TO-220-2 Tube Discontinued Standard 600 V 8A 2.9 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
    UGA15120 C0G

    UGA15120 C0G

    DIODE GEN PURP 15A TO220AC

    Taiwan Semiconductor Corporation

    7,838
    RFQ
    UGA15120 C0G

    Datasheet

    - TO-220-2 Tube Discontinued Standard 1200 V 15A 2.9 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 5 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
    UGA15120HC0G

    UGA15120HC0G

    DIODE GEN PURP 15A TO220AC

    Taiwan Semiconductor Corporation

    9,967
    RFQ
    UGA15120HC0G

    Datasheet

    - TO-220-2 Tube Discontinued Standard 1200 V 15A 2.9 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 5 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
    UGA8120 C0G

    UGA8120 C0G

    DIODE GEN PURP 8A TO220AC

    Taiwan Semiconductor Corporation

    8,322
    RFQ
    UGA8120 C0G

    Datasheet

    - TO-220-2 Tube Discontinued Standard 1200 V 8A 2.8 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 5 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
    UGA8120HC0G

    UGA8120HC0G

    DIODE GEN PURP 8A TO220AC

    Taiwan Semiconductor Corporation

    9,708
    RFQ
    UGA8120HC0G

    Datasheet

    - TO-220-2 Tube Discontinued Standard 1200 V 8A 2.8 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 5 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
    UGF10J C0G

    UGF10J C0G

    DIODE GEN PURP 600V 10A ITO220AC

    Taiwan Semiconductor Corporation

    5,577
    RFQ
    UGF10J C0G

    Datasheet

    - TO-220-2 Full Pack Tube Discontinued Standard 600 V 10A 2 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 150°C
    UGF12J C0G

    UGF12J C0G

    DIODE GEN PURP 600V 12A ITO220AC

    Taiwan Semiconductor Corporation

    4,761
    RFQ
    UGF12J C0G

    Datasheet

    - TO-220-2 Full Pack Tube Discontinued Standard 600 V 12A 2 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 5 µA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 150°C
    UGF12JD C0G

    UGF12JD C0G

    DIODE GEN PURP 600V 12A ITO220AC

    Taiwan Semiconductor Corporation

    5,072
    RFQ
    UGF12JD C0G

    Datasheet

    - TO-220-2 Full Pack Tube Discontinued Standard 600 V 12A 3.1 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 175°C
    UGF12JDHC0G

    UGF12JDHC0G

    DIODE GEN PURP 600V 12A ITO220AC

    Taiwan Semiconductor Corporation

    9,080
    RFQ
    UGF12JDHC0G

    Datasheet

    - TO-220-2 Full Pack Tube Discontinued Standard 600 V 12A 3.1 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 175°C
    UGF12JHC0G

    UGF12JHC0G

    DIODE GEN PURP 600V 12A ITO220AC

    Taiwan Semiconductor Corporation

    4,184
    RFQ
    UGF12JHC0G

    Datasheet

    - TO-220-2 Full Pack Tube Discontinued Standard 600 V 12A 2 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 5 µA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
    UGF5J C0G

    UGF5J C0G

    DIODE GEN PURP 600V 5A ITO220AC

    Taiwan Semiconductor Corporation

    7,682
    RFQ
    UGF5J C0G

    Datasheet

    - TO-220-2 Full Pack Tube Discontinued Standard 600 V 5A 3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 30 µA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 150°C
    UGF8JD C0G

    UGF8JD C0G

    DIODE GEN PURP 600V 8A ITO220AC

    Taiwan Semiconductor Corporation

    7,857
    RFQ
    UGF8JD C0G

    Datasheet

    - TO-220-2 Full Pack Tube Discontinued Standard 600 V 8A 2.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 150°C
    UGF8JHC0G

    UGF8JHC0G

    DIODE GEN PURP 600V 8A ITO220AC

    Taiwan Semiconductor Corporation

    6,239
    RFQ
    UGF8JHC0G

    Datasheet

    - TO-220-2 Full Pack Tube Discontinued Standard 600 V 8A 2.9 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
    1N4004GHB0G

    1N4004GHB0G

    DIODE GEN PURP 400V 1A DO204AL

    Taiwan Semiconductor Corporation

    5,626
    RFQ
    1N4004GHB0G

    Datasheet

    - DO-204AL, DO-41, Axial Bulk Active Standard 400 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 10pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 150°C
    1N4005G B0G

    1N4005G B0G

    DIODE GEN PURP 600V 1A DO204AL

    Taiwan Semiconductor Corporation

    7,414
    RFQ
    1N4005G B0G

    Datasheet

    - DO-204AL, DO-41, Axial Bulk Discontinued Standard 600 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 10pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
    1N4006G B0G

    1N4006G B0G

    DIODE GEN PURP 800V 1A DO204AL

    Taiwan Semiconductor Corporation

    2,193
    RFQ
    1N4006G B0G

    Datasheet

    - DO-204AL, DO-41, Axial Bulk Active Standard 800 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 10pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
    1N4006GHB0G

    1N4006GHB0G

    DIODE GEN PURP 800V 1A DO204AL

    Taiwan Semiconductor Corporation

    2,723
    RFQ
    1N4006GHB0G

    Datasheet

    - DO-204AL, DO-41, Axial Bulk Active Standard 800 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 10pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 150°C
    1N4007G B0G

    1N4007G B0G

    DIODE GEN PURP 1KV 1A DO204AL

    Taiwan Semiconductor Corporation

    5,035
    RFQ
    1N4007G B0G

    Datasheet

    - DO-204AL, DO-41, Axial Bulk Active Standard 1000 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 10pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
    1N4007GHB0G

    1N4007GHB0G

    DIODE GEN PURP 1KV 1A DO204AL

    Taiwan Semiconductor Corporation

    7,006
    RFQ
    1N4007GHB0G

    Datasheet

    - DO-204AL, DO-41, Axial Bulk Discontinued Standard 1000 V 1A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 10pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 150°C
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